New Zirconia Material ZSL108 for SiC Polishing
— Achieving approximately 1.6x faster SiC wafer polishing speed and enhanced surface smoothness —
Daiichi Kigenso Kagaku Kogyo Co., Ltd. (“DKK”, Osaka/Japan, Prime Market of the Tokyo Stock Exchange) has recently developed a new zirconia material “ZSL108.”
The newly developed product is a zirconia sol (a dispersion of zirconia nanoparticles) used for polishing the surface of SiC (silicon carbide) wafers in the manufacturing process of power semiconductors. By developing a particle shape that enables efficient wafer surface polishing, the new material achieves approximately 1.6 times faster polishing speed compared to our conventional products, significantly reducing processing time. Furthermore, the uniform particle size distribution of the zirconia nanoparticles ensures high surface smoothness with minimal variation, contributing to improved quality.
The global demand for power semiconductors is expanding, particularly in fields such as electric vehicles (EVs) and renewable energy. Through the market introduction of this newly developed product, we aim to contribute to technological innovation and industrial advancement.
<Features>
1. Improved manufacturing efficiency with 1.6 times faster polishing speed
Thanks to our proprietary particle control technology, we have achieved a particle shape that delivers high polishing performance. The zirconia nanoparticles form a distorted 3D structure with X- or T-shaped intersections, creating multiple contact points with the wafer surface from various directions. This increases friction and enhances material removal efficiency, contributing to faster polishing. In polishing tests conducted on SiC wafers, the new product demonstrated approximately 1.6 times the polishing speed compared to our conventional product.
2. High Surface Smoothness Achieved Through Polishing
By controlling the size of zirconia nanoparticles at the nanoscale, we achieved a uniform particle size distribution in the dispersion.
The absence of excessively large particles suppresses the formation of micro-scratches and surface irregularities on the wafer, resulting in high surface smoothness after polishing. In our SiC wafer polishing tests, atomic force microscopy (AFM) and white light interferometry (WLI) confirmed atomically flat surfaces with no scratches.
<Background of development>
With the rapid growth of markets such as EVs and renewable energy, the demand for wide bandgap semiconductors (*1) like SiC is increasing. Compared to conventional silicon (Si), SiC offers superior properties such as higher breakdown electric field strength (*2), greater electron mobility, and better thermal conductivity, making it a next-generation material of interest. However, SiC is extremely hard and chemically stable, making it very difficult to process.
In semiconductor wafer manufacturing, high polishing speed, atomic-level flatness, and defect-free surfaces are essential. The performance of polishing abrasives directly affects processing quality. Poor polishing performance increases processing time and cost, while uneven particle size or dispersion can cause pits and scratches on the wafer surface, reducing yield and device performance. Therefore, improving abrasive performance is a critical technical challenge for mass production and cost reduction of SiC wafers.
(*1) wide bandgap semiconductor: A semiconductor material capable of stable operation under high voltage and high temperature conditions while minimizing power loss. Representative materials include difficult-to-process crystalline materials such as silicon carbide (SiC) and gallium nitride (GaN).
(*2) breakdown electric field strength: An indicator showing the strength a material can withstand before electricity penetrates and destroys it.
<Methodology of development>
ZSL108 was developed by applying our nanoparticle control technology for zirconia materials. We focused on achieving optimal particle shape and size distribution for polishing abrasives and succeeded in creating a zirconia sol that addresses the challenges of SiC wafer manufacturing. Our technology allows for material customization to meet specific needs.
Upcoming Event
November 6th
Please join DKK America Materials, Inc. (“DKA”) on November 6th for our next engaging webinar. Our guest presenter, Mr. Taihei Ouchi of DKA will provide information on how our zirconia products play an important role in Fuel Cell (SOFC). Watch for your invitation via LinkedIn or reach out to us for a link to the meeting.
Title: Zirconia for Fuel Cell
Date: November 6, 2025
Time: 13:00 – 14:00 EST
About DKK
DKK America Materials, Inc. (“DKA”) is the wholly-owned U.S. subsidiary of Daiichi Kigenso Kagaku Kogyo Co., Ltd. (“DKK”). DKK America Materials, Inc. (“DKA”) maximizes the potential of zirconium compounds.
As a dedicated zirconium compound manufacturer, our unique technologies maximize the potential of zirconium properties. Our zirconium compounds and materials have many applications that advance technology and safety.
Applications Include:
● Industrial Catalysts
● Dental Materials
● Automotive Catalysts
● Electronic Materials
● Fine Ceramics
● Fuel Cells
● Oxygen Sensors
● Semiconductors
Get in contact with us!
Follow Us: https://www.linkedin.com/company/dkk-america-materials-inc/
DKK America Materials, Inc., 19500 Victor Parkway, Suite #290, Livonia, Michigan 48152 U.S.A.
TEL: +1(734) 743-2440